HFA60MB60C
2
PD-2.462 rev. A 03/99
Outline D-60 (Modfied JEDEC TO - 249AA)
Dimensions in millimeters and inches
61.21 (2.410)
60.71 (2.390)
37.85 (1.490)
38.35 (1.510)
50.80 (2.000)
REF.
25.65 (1.010)
25.15 (0.990)
12.70 (0.500)
REF.
6.10 (0.240)
6.60 (0.260)
0.76 (0.030)
1.14 (0.045)
REF.
1.27 (0.050)
3.30 (0.130)
3.05 (0.120)
4.95 (0.195)
4.45 (0.175)
DIA.
(4 PLCS.)
13.21 (0.520)
12.70 (0.500)
10.16 (0.400)
8.38 (0.330)
0.89 (0.035)
1.14 (0.045)
*
6.60 (0.260)
6.10 (0.240)
(8 PLCS.)
3.93 (0.155)
3.68 (0.145)
1.14 (0.045)
0.89 (0.035)*
(9 PLCS.)
*
PRE-SOLDER DIP DIMENSIONS
19
LEAD ASSIGNMENTS
1-3 ANODE
4-6 CATHODE
7-9 ANODE
BASE (ISOLATED)
A
Parameter
Min. Typ. Max.
Units Test Conditions
trr
Reverse Recovery Time ––– 30 ––– IF
= 1.0A, di
f /dt = 200A/μs, VR
= 30V
trr1
––– 67 100 ns TJ
= 25°C See
trr2
––– 112 170 TJ
= 125°C Fig. 5 I
F
= 50A
IRRM1
Peak Recovery Current ––– 6.0 11 TA
J
= 25°C See
IRRM2
––– 9.0 16 TJ
= 125°C Fig. 6 V
R
= 200V
Qrr1
Reverse Recovery Charge ––– 200 550 TnC
J
= 25°C See
Qrr2
––– 500 1400 TJ
= 125°C Fig. 7 di
f /dt = 200A/μs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current ––– 250 ––– TA/μs
J
= 25°C See
di(rec)M/dt2 During tb
––– 170 ––– TJ
= 125°C Fig. 8
Parameter
Min. Typ. Max.
Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage 600 ––– ––– V IR
= 100μA
VFM
Max Forward Voltage ––– 1.3 1.5 IF
= 30A
––– 1.4 1.7 V IF
= 60A
––– 1.1 1.3 IF
= 30A, T
J
= 125°C
IRM
Max Reverse Leakage Current ––– 2.0 10 μA VR
= V
R
Rated
––– 0.50 2.0 mA TJ
= 125°C, V
R
= 480V
See Fig. 2
CT
Junction Capacitance ––– 68 100 pF VR
= 200V
LS
Series Inductance ––– 9.2 ––– nH
Lead to lead 5mm from package body
Electrical Characteristics (per Leg) @ TJ
= 25°C (unless otherwise specified)
Dynamic Recovery Characteristics (per Leg) @ TJ
= 25°C (unless otherwise specified)
See Fig. 3
See Fig. 1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
HFA70NC60CSL
DIODE HEXFRED 600V 56A D61-8-SL
HFA70NC60C
DIODE HEXFRED 600V 56A D61-8
HFA75MB40C
DIODE HEXFRED 400V 75A D-60
HFA80NC40CSL
DIODE HEXFRED 400V 85A D61-8-SL
HFA80NC40CSM
DIODE HEXFRED 400V 85A D61-8-SM
HFA80NC40C
DIODE HEXFRED 400V 85A D61-8
IMN10T108
DIODE SWITCH 80V 100MA SOT-457
IMN11T110
DIODE SW 80V 100MA SOT-457 TR
相关代理商/技术参数
HFA60MC60C
功能描述:DIODE HEXFRED 600V 50A TO-249AA RoHS:是 类别:半导体模块 >> 二极管，整流器 系列:HEXFRED® 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件
HFA7-0002/883
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HFA7-0002-5
制造商:Rochester Electronics LLC 功能描述:- Bulk
HFA7-0002-9
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HFA7-0003/883 DIE
制造商:Harris Corporation 功能描述:
HFA7-0003-5
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HFA7-0003-9
制造商:Rochester Electronics LLC 功能描述:- Bulk
HFA7-0005/883
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: